1 power transistors 2sd1751 silicon npn triple diffusion planar type for power amplification complementary to 2sb1170 n features l high forward current transfer ratio h fe which has satisfactory linearity l low collector to emitter saturation voltage v ce(sat) l i type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 60 60 6 4 2 15 1.3 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i ces i ceo i ebo v ceo h fe1 h fe2 * v be v ce(sat) f t t on t stg t f conditions v ce = 60v, v be = 0 v ce = 30v, i b = 0 v eb = 6v, i c = 0 i c = 30ma, i b = 0 v ce = 4v, i c = 0.1a v ce = 4v, i c = 1a v ce = 4v, i c = 1a i c = 2a, i b = 0.2a v ce = 10v, i c = 0.5a, f = 1mhz i c = 1a, i b1 = 0.1a, i b2 = C 0.1a min 60 35 70 typ 20 0.2 3.5 0.7 max 200 300 1 250 1.2 2 unit m a m a ma v v v mhz m s m s m s * h fe2 rank classification rank q p h fe2 70 to 150 120 to 250 t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter i type package unit: mm 1:base 2:collector 3:emitter i type package (y) 7.2 0.3 7.0 0.3 3.0 0.2 3.5 0.2 10.0 +0.3 ?. 0.8 0.2 1.0 0.2 4.6 0.4 2 13 1.1 0.1 0.75 0.1 2.3 0.2 0.85 0.1 0.4 0.1 7.0 0.3 0.75 0.1 2.3 0.2 4.6 0.4 1.1 0.1 10.2 0.3 7.2 0.3 2.0 0.2 0.9 0.1 3.5 0.2 2.5 0.2 1.0 1.0 2.5 0.2 3.0 0.2 1.0 max. 123 0 to 0.15 0 to 0.15 2.5 0.5 max.
2 power transistors 2sd1751 p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =1.3w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 5 4 3 2 1 t c =25?c i b =100ma 80ma 50ma 40ma 30ma 20ma 10ma 5ma 1ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 03.0 2.5 2.0 0.5 1.5 1.0 0 6 5 4 3 2 1 v ce =4v t c =100?c 25?c ?5?c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =4v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =10v f=1mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c t=10ms 1ms 300ms collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 1 10 10 2 10 3 (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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